Micro-spot Spectroscopic Reflectometry
The FilmTek™ 2000M micro-spot size benchtop metrology system is engineered for unparalleled versatility and high performance, meeting the needs of patterned film applications requiring a very small spot size. The FilmTek™ 2000M allows for measurement spot sizes as small as 2µm, and delivers reliable measurement of both thin and thick films.
Conventional optical metrology systems which utilize a high power objective for sub-15µm spot measurements are prone to significant signal degradation and optical artifacts, limiting their use for patterned wafers, non-uniform films, and thick films. The patented optical design of FilmTek™ 2000M maintains high signal fidelity even during small spot measurements by allowing for a sub-10µm spot with a low power objective. Avoiding the use of a high power objective is critical for limiting the angular spectrum of the collected light and maximizing the coherence of the spectral reflection.
FilmTek™ 2000M capabilities can be expanded to perform fully-automated imaging-based critical dimension (CD) measurement of patterned wafers. This option allows for simultaneous CD and film thickness measurement.
FilmTek™ 2000M is a fully-integrated package, with advanced material modeling software to make even the most rigorous of measurement tasks reliable and intuitive. Addition of an optional wafer auto-loader provides high-throughput, fully-automated mapping of patterned wafers.
Key Features:
- 5nm to 350µm film thickness range
- 2µm spot size (5×10µm standard)
- Automated stage with autofocus
- Camera for imaging measurement location
- Pattern recognition
Measurement Capabilities:
FilmTek™ 2000M incorporates SCI’s generalized material model with advanced global optimization algorithms for simultaneous determination of:
- Multiple layer thicknesses
- Indices of refraction [ n(λ) ]
- Extinction (absorption) coefficients [ k(λ) ]
- Energy band gap [ Eg ]
- Critical dimension (CD) measurement
Optional Features:
- Automated wafer handling
- SECS/GEM
| Technical Specifications | |
|---|---|
| Film thickness range: | 5nm to 350µm (5nm to 150µm is standard) |
| Film thickness accuracy: | ±1.5Å for NIST traceable standard oxide 1000Å to 1µm |
| CD precision (1σ): | <0.2% |
| Spectral range: | 380nm to 1700nm ( 380nm to 1000nm is standard) |
| Measurement spot size: | 2µm (5×10µm standard with 10x objective) |
| Sample size: | 2mm to 300mm (150mm is standard) |
| Spectral resolution: | 0.3-2nm |
| Light source: | Regulated halogen lamp (2,000 hrs lifetime) |
| Detector type: | 2048 pixel Sony linear CCD array / 512 pixel cooled Hamamatsu InGaAs CCD array (NIR) |
| Computer: | Multi-core processor with Windows™ 10 Operating System |
| Measurement time: | <1 sec per site (e.g., oxide film) |
| Performance Specifications | |||
|---|---|---|---|
| Film(s) | Thickness | Measured Parameters | Precision (1σ) |
| Oxide / Si | 50-1000 nm | t | 0.025 nm |
| 1-150 µm |
t | 0.005% | |